Get Advanced High Speed Devices PDF

By Michael Shur

ISBN-10: 9814287865

ISBN-13: 9789814287869

Complex excessive velocity units covers 5 components of complicated gadget know-how: terahertz and excessive velocity electronics, ultraviolet emitters and detectors, complex III-V box impression transistors, III-N fabrics and units, and SiC units. those rising components have attracted loads of cognizance and the updated effects offered within the ebook could be of curiosity to so much machine and electronics engineers and scientists. The participants diversity from well-liked lecturers, comparable to Professor Lester Eastman, to key US executive scientists, akin to Dr Michael Wraback.

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Extra resources for Advanced High Speed Devices

Example text

1. Device structure and operation principle Figure 1 illustrates the cross section of the plasmon-resonant emitter. The device structure is based on a high electron mobility transistor (HEMT) and incorporates (i) doubly interdigitated grating gates (G1 and G2) that periodically localize the 2D plasmon in stripes on the order of 100 nm with a micron-to-submicron interval and (ii) a vertical cavity structure in between the top grating plane and a terahertz mirror at the backside. The structure (i) works as a terahertz antenna12 and (ii) works as an amplifier.

Yu, L. Wang, Y. Yuan, Y, Taur, P. Asbeck, “Scaling of nanowire transistors”, accepted by Trans. of Elec. Dev. 2. L. Wang, D. Wang, P. Asbeck, “A numerical Schrödinger-Poisson solver for radially symmetric nanowire core-shell structures”, Solid State Electronics, vol. 50, pp 1732-1739 3. K. Natori, “Ballistic metal-oxide-semiconductor field effect transistor”, J. Appl. Phys. vol. 76, pp. 4879-4890 International Journal of High Speed Electronics and Systems Vol. 19, No. edu The Ballistic Deflection Transistor (BDT) is a novel device that is based upon an electron steering and a ballistic deflection effect.

Theoretical investigations in Refs. 5). Carrier dynamics under weakly photoexcited conditions in our device are simulated based on an extended drift-diffusion model29. The result indicates that the injection of photoelectrons from a weakly charged 2DEG to the adjacent deeply charged 2DEG (plasmon cavity) is performed in a quasi-ballistic manner so that the above-mentioned instability condition is obtainable. 0 V, terahertz emission from the device was measured by using a 4-K cooled Si bolometer.

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Advanced High Speed Devices by Michael Shur

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